MSc J. Lee

1. An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS
   Wang, Z.; Choi, M.; Lee, K.; Park, K.; Liu, Z.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
   IEEE Journal of Solid-State Circuits,
   Volume 57, Issue 1, pp. 21-31, 2022. DOI: 10.1109/JSSC.2021.3109562

2. A Ring-Oscillator Sub-Sampling PLL With Hybrid Loop Using Generator-Based Design Flow
   Wang, Z.; Choi, M.; Wright, J.; Lee, K.; Liu, Z.; Yin, B.; Han, J.; Du, S.; Alon, E.;
   In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
   pp. 2881-2885, 2022. DOI: 10.1109/ISCAS48785.2022.9937615

3. A 200Gb/s PAM-4 Transmitter with Hybrid Sub-Sampling PLL in 28nm CMOS Technology
   Wang, Z.; Choi, M.; Kwon, P.; Lee, K.; Yin, B.; Liu, Z.; Park, K.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
   In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
   pp. 34-35, 2022. DOI: 10.1109/VLSITechnologyandCir46769.2022.9830237

4. A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
   Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
   IEEE Solid-State Circuits Letters,
   Volume 2, pp. 67-70, 10 2019. DOI: 10.1109/LSSC.2019.2937441
   
   Abstract: ...

   This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μm 2 and achieves moderate accuracy [±1.2 °C (3σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2x better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μA and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ·K 2.

5. A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
   Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
   In Proc. European Solid-State Circuits Conference (ESSCIRC),
   9 2019. DOI: 10.1109/ESSCIRC.2019.8902650

6. 10b 1MS/s column parallel SAR ADC for high speed CMOS image sensors with offset compensation technique using analog summation method
   Jaekyum Lee; Albert Theuwissen;
   In Scientific CMOS Image Sensors Workshop,
   Toulouse, November 2019.

7. A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
   Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
   In Proc. European Solid-State Circuits Conference (ESSCIRC),
   pp. 68-71, 9 2019. DOI: 10.1109/ESSCIRC.2019.8902650

8. A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K^2 in 65-nm CMOS
   W. Choi; Y. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K. A. A. Makinwa; Y. Chae;
   IEEE Journal of Solid-State Circuits,
   Volume 53, Issue 12, pp. 3356-3367, 12 2018. DOI: 10.1109/JSSC.2018.2871622
   
   Abstract: ...

   This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².

9. A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K^2 in 65-nm CMOS
   W. Choi; Y. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K. A. A. Makinwa; Y. Chae;
   IEEE Journal of Solid-State Circuits,
   Volume 53, Issue 12, pp. 3356-3367, 12 2018. DOI: 10.1109/JSSC.2018.2871622
   
   Abstract: ...

   This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².

10. A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
    W. Choi; Y.T. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K.A.A. Makinwa; Y. Chae;
    In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 322-324, 2 2018. DOI: 10.1109/ISSCC.2018.8310314

11. A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
    W. Choi; Y.T. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K.A.A. Makinwa; Y. Chae;
    In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 322-324, 2 2018. DOI: 10.1109/ISSCC.2018.8310314

12. A 3 ppm 1.5 x 0.8 mm2 1.0 µA 32.768 kHz MEMS-based oscillator
    S. Zaliasl; J.C. Salvia; G.C. Hill; L. Chen; K. Joo; R. Palwai; N. Arumugam; M. Phadke; S. Mukherjee; HC Lee; C Grosjean; PM Hagelin; S Pamarti; TS Fiez; K.A.A. Makinwa; A. Partridge; V. Menon;
    IEEE Journal of Solid State Circuits,
    Volume 50, Issue 1, pp. 291-302, 2015. Available online 3-11-2014.

13. A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM
    Y.Y. Kim; W. Choi; J. Kim; S. Lee; S Lee; H. Kim; K.A.A. Makinwa; Y. Chae; TW Kim;
    In W Pribyl; F Dielacher; G Hueber (Ed.), Proc. European Solid-State Circuits Conference (ESSCIRC),
    IEEE, pp. 267-270, 2015.

14. A 1.55×0.85mm2 3ppm 1.0μA 32.768kHz MEMS-based oscillator
    S.Z. Asl; S. Mukherjee; W. Chen; Kimo Joo; R. Palwai; N. Arumugam; P. Galle; M. Phadke; C Grosjean; J.C. Salvia; H Lee; S Pamarti; TS Fiez; K.A.A. Makinwa; A. Partridge; V. Menon;
    In LC Fujino; J Anderson; {et al} (Ed.), Digest of Technical Papers - 2014 IEEE International Solid-State Circuits Conference,
    IEEE, pp. 226-227, 2014. Harvest Session 12. Sensors, MEMS and Displays 12.9.

15. A 240-frames/s 2.1-Mpixel CMOS image sensor with columnshared cyclic adc's
    S. Lim; J. Cheon; Y. Chae; W. Jung; D.H. Lee; M. Kwon; S. Yoo; S. Ham; G. Han;
    IEEE Journal of Solid State Circuits,
    Volume 46, Issue 9, pp. 2073-2083, 2011.

16. A 2.1 M pixels, 120 frame/s CMOS image sensor with column-parallel ¿¿ ADC Architecture
    Y. Chae; J. Cheon; S. Lim; M. Kwon; K. Yoo; W. Jung; D.H. Lee; S. Ham; G. Han;
    IEEE Journal of Solid State Circuits,
    Volume 46, Issue 1, pp. 236-247, 2011.

17. A 2.1 Mpixel 120 frames/s CMOS image sensor with column parallel ¿¿ ADC architecture
    Y. Chae; J. Cheon; S. Lim; D. Lee; M. Kwon; K. Yoo; W. Jung; D.H. Lee; S. Ham; G. Han;
    In U Moon (Ed.), IEEE International Solid State Circuits Conference,
    IEEE, pp. 394-395, 2011.

18. Apparatus and method for sigma-delta analog to digital conversion
    Y. Chae; I. Lee; J. Cheon; S. Ham; G. Han;
    2011.

19. Apparatus and method for sigma-delta analog to digital conversion
    Y. Chae; I. Lee; J. Cheon; S. Ham; G. Han;
    Patent, US 7,916,061, 2011.

20. A single-chip CMOS smoke and temperature sensor for an intelligent fire detector
    J. Cheon; J. Lee; I. Lee; Y. Chae; Y. yoo; G. Han;
    IEEE Sensors Journal,
    Volume 9, Issue 8, pp. 914-921, 2009.

21. Smart CMOS image sensor with high SBR and subpixel resolution for light-selection-based range finding
    J. Cheon; Y. Chae; D. Kim; S. Lim; I. Lee; K. Lee; D.J. Kim; G. Han;
    IEEE Electron Device Letters,
    Volume 56, Issue 11, pp. 2546-2555, 2009.

22. An interference rejection filter for an ultra-wideband quadrature downconversion autocorrelation receiver
    S. Bagga; S.A.P. Haddad; K. van Hartingsveldt; SS. Lee; W.A. Serdijn; J.R. Long;
    In s.n. (Ed.), Proceedings of IEEE international symposium on circuits and systems (ISCAS 2005),
    IEEE, pp. 5357-5360, 2005. Editor onbekend JH.

23. A quadrature downconversion autocorrelation receiver architecture for UWB
    SS. Lee; S. Bagga; W.A. Serdijn;
    s.n., , pp. 1-5, 2004. ed. isniet bekend.

24. FEM study on the dependence of resonant frequency shift on mechanical stress of thin film resonator
    SS. Lee; R. Kazinczi; J.R. Mollinger; M.J. Vellekoop; A. Bossche;
    In SAFE - ProRISC - SeSens 2001: proceedings. Semiconductor Advances for Fututre Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology,
    STW Technology Foundation, pp. 817-820, 2001.

25. Photodiode structures to measure the shape of particles and cells
    J.H. Nieuwenhuis; SS. Lee; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
    In SAFE - ProRISC - SeSens 2001: proceedings. Semiconductor Advances for Future Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology,
    STW Technology Foundation, pp. 839-842, 2001.

26. Particle-shape sensing-elements for integrated flow cytometer
    J.H. Nieuwenhuis; SS. Lee; J. Bastemeijer; M.J. Vellekoop;
    In {JM Ramsey}; {A Berg}, {van den} (Ed.), Proceedings,
    Kluwer, pp. 357-358, 2001.

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