MSc X. Shi

1. An integrated 2D ultrasound phased array transmitter in CMOS with pixel pitch-matched beamforming
   Costa, Tiago; Shi, Chen; Tien, Kevin; Elloian, Jeffrey; Cardoso, Filipe Arroyo; Shepard, Kenneth L;
   IEEE Transactions on Biomedical Circuits and Systems,
   Volume 15, Issue 4, pp. 731-742, 2021.

2. A Low-Power Area-Efficient SAR-Assisted Hybrid ADC for Ultrasound imaging
   Yixin Shi;
   MSc thesis, Delft University of Technology, August 2017.
   document

3. Stability characterization of high-performance PureB Si-photodiodes under aggressive cleaning treatments in industrial applications
   V. Mohammadi; L. Shi; U. Kroth; C. Laubis; S. Nihtianov;
   In LG Franquelo; BM Wilamowski (Ed.), Proc. of the IEEE International Conference on Industrial Technology,
   IEEE, pp. 3370-3376, 2015. Harvest.

4. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment
   L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze;
   IEEE Sensors Journal,
   Volume 13, Issue 5, pp. 1699-1707, 2013. Online publicatie dd 20 december 2012.

5. Performance analysis of Si-based ultra-shallow junction photodiodes for UV radiation detection
   L. Shi;
   PhD thesis, Delft University of Technology, 2013. Harvest.

6. Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges
   L. Shi; S. Nihtianov; L. Haspeslagh; F. Scholze; A. Gottwald; L.K. Nanver;
   IEEE Transactions on Electron Devices,
   Volume 59, Issue 11, pp. 2888-2894, 2012. Harvest.

7. Comparative study of silicon-based ultraviolet photodetectors
   L. Shi; S. Nihtianov;
   IEEE Sensors Journal,
   Volume 12, Issue 7, pp. 2453-2459, 2012. Harvest Article number: 6175098.

8. Electrical and optical performance investigation of si-based ultrashallow-junction p+-n VUV/EUV photodiodes
   L. Shi; S. Nihtianov; S. Xia; L.K. Nanver; A. Gottwald; F. Scholze;
   IEEE Transactions on Instrumentation and Measurement,
   Volume 61, Issue 5, pp. 1268-1277, 2012. Harvest Article number: 6163408.

9. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application
   L. Shi; S. Nihtianov; F. Scholze; L.K. Nanver;
   In L Gomes; LG Chakraborty; D Irwin (Ed.), Proc. of the 38th Annual Conference on IEEE Industrial Electronics Society,
   IEEE, pp. 3952-3957, 2012.

10. Series resistance optimization of high-sensitivity Si-based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), Proc. of the IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

11. Electrical performance optimization of a silicon-based EUV photodiode with hear-theoretical quantum efficiency
    L. Shi; L.K. Nanver; C. Laubis; F. Scholze; S. Nihtianov;
    In {Esashi et al.}, M; Z Zhou (Ed.), Proc. of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems,
    IEEE, pp. 48-51, 2011.

12. Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

13. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze; A. Gottwald;
    In OH Siegmund (Ed.), Proc. of the SPIE 8145, 81450N,
    SPIE, pp. 1-9, 2011.

14. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment
    L. Shi; L.K. Nanver; S. Nihtianov;
    In X Yu; T Dillon; Y Ibrahim; E Chang (Ed.), Proc. of the 37th Annual Conference of the IEEE Industrial Electronics Society,
    IEEE, pp. 2651-2656, 2011.

15. Pure boron chemical vapor deposited layers; A new material for silicon device processing
    L.K. Nanver; T.L.M. Scholtes; F. Sarubbi; W.B. De Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok Kai Rine; L. Shi; S. Nihtianov; K Buisman;
    In {Lojek et al}, B (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010,
    IEEE, pp. 136-139, 2010.

16. Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range
    L. Shi; F. Sarubbi; L.K. Nanver; U. Krothc A; A. Gottwald; S. Nihtianov;
    In B Jakoby; M.J. Vellekoop (Ed.), Proceedings EuroSensors XXIV,
    Elsevier, pp. 633-636, 2010.

17. Optical stability investigation of high performance silicon based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; A. Gottwald; U. Krothc A;
    In T Kenny; G Fedder (Ed.), Proceedings IEEE Sensors Conference 2010,
    IEEE, pp. 132-135, 2010.

18. VUV performance characterization of a silicon based ultrashallow junction photodiode
    L. Shi; S. Nihtianov; L.K. Nanver; U. Krothc A;
    In {French et al}, P (Ed.), Proceedings 13th SAFE Workshop of the STW.ICT Conference 2010,
    STW, pp. 158-161, 2010.

19. high performance silicon based extreme ultraviolet radiation detector for industrial application
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; T.L.M. Scholtes; F. Scholze;
    s.n. (Ed.);
    IEEE, , pp. 1891-1896, 2009.

20. Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; F. Scholze;
    In P.J. French (Ed.), Proc. of SAFE 2009,
    STW, pp. 530-533, 2009.

21. Response time of shallow junction silicon photodiodes
    L. Shi; S. Xia; F. Sarubbi; R. Naulaerts; S. Nihtianov; L.K. Nanver;
    In s.n. (Ed.), Proceedings of Electronics 2008,
    Electronics 2008, pp. 21-26, 2008.

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